E-business and Export Behaviour: Evidence from Indian Firms

E-business, international orientation, India

ID-based Ring Signature and Proxy Ring Signature Schemes from Bilinear Pairings

In 2001, Rivest et al. firstly introduced the concept of ring signatures. A ring signature is a simplified group signature without any manager. It protects the anonymity of a signer. The first scheme proposed by Rivest et al. was based on RSA cryptosystem and certificate based public key setting. The first ring signature scheme based on DLP was proposed by Abe, Ohkubo, and Suzuki. Their scheme is also based on the general certificate-based public key setting too. In 2002, Zhang and Kim proposed a new ID-based ring signature scheme using pairings. Later Lin and Wu proposed a more efficient ID-based ring signature scheme. Both these schemes have some inconsistency in computational aspect. In this paper we propose a new ID-based ring signature scheme and a proxy ring signature scheme. Both the schemes are more efficient than existing one. These schemes also take care of the inconsistencies in above two schemes.Comment: Published with ePrint Archiv

Electronic structure study of vanadium spinels by using density functional theory and dynamical mean field theory

Theoretically, various physical properties of AV$_{2}$O$_{4}$ (A=Zn, Cd and Mg) spinels have been extensively studied for last 15 years. Besides of this, no systematic comparative study has been done for these compounds, where the material specific parameters are used. Here, we report the comparative electronic behaviour of these spinels by using a combination of density functional theory and dynamical mean-field theory, where the self-consistent calculated Coulomb interaction $U$ and Hund's coupling $J$ (determined by Yukawa screening $\lambda$) are used. The main features, such as insulating band gaps ($E_{g}$), degree of itinerancy of V 3$d$ electrons and position of lower Hubbard band are observed for these parameters in these spinels. The calculated values of $E_{g}$ for ZnV$_{2}$O$_{4}$, CdV$_{2}$O$_{4}$ and MgV$_{2}$O$_{4}$ are found to be $\sim$0.9 eV, $\sim$0.95 eV and $\sim$1.15 eV, respectively, where the values of $E_{g}$ are close to experiment for ZnV$_{2}$O$_{4}$ and MgV$_{2}$O$_{4}$. The position of lower Hubbard band are observed around $\sim$-1.05 eV, $\sim$-1.25 eV and $\sim$-1.15 eV for ZnV$_{2}$O$_{4}$, CdV$_{2}$O$_{4}$ and MgV$_{2}$O$_{4}$, respectively, which are also in good agreement with the experimental data for ZnV$_{2}$O$_{4}$. The order of average impurity hybridization function of V site are found to be ZnV$_{2}$O$_{4}$$>$MgV$_{2}$O$_{4}$$>$CdV$_{2}$O$_{4}$. Hence, the degree of localization of V 3$d$ electrons is largest for CdV$_{2}$O$_{4}$ and smallest for ZnV$_{2}$O$_{4}$, which is in accordance with our earlier results. Hence, present work shows the importance of material specific parameters to understand the comparative electronic behaviour of these compounds.Comment: 7 pages, 5 figure